H5N5001FM silicon n channel mos fet high speed power switching ade-208-1380 (z) 1st. edition mar. 2001 features low on-resistance : r ds(on) =1.1 w typ. low leakage current : i dss =1 m a max (at v ds = 500 v) high speed switching : tf = 15ns typ (at v gs = 10 v, v dd = 250 v, i d = 2.5 a) low gate charge : qg = 15nc typ (at v dd = 400 v, v gs = 10 v, i d = 5 a) avalanche ratings outline 1 2 3 to?20fm 1. gate 2. drain 3. source d g s
H5N5001FM 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 500 v gate to source voltage v gss 30 v drain current i d 5a drain peak current i d(pulse) note1 20 a body-drain diode reverse drain current i dr 5a body-drain diode reverse drain peak current i dr(pulse) note1 20 a avalanche current i ap note3 5a channel dissipation pch note2 30 w channel to case thermal impedance q ch-c 4.17 c/w channel temperature tch 150 c storage temperature tstg ?5 to +150 c note: 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c 3. tch 150 c
H5N5001FM 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 500 v i d = 10ma, v gs = 0 gate to source leak current i gss 0.1 m av gs = 30v, v ds = 0 zero gate voltege drain current i dss 1 m av ds = 500 v, v gs = 0 gate to source cutoff voltage v gs(off) 3.0 4.0 v i d = 1ma, v ds = 10v static drain to source on state resistance r ds(on) 1.1 1.5 w i d = 2.5a, v gs = 10v note4 forward transfer admittance |y fs | 3.0 4.5 s i d = 2.5a, v ds = 10v note4 input capacitance ciss 580 pf v ds = 25v output capacitance coss 70 pf v gs = 0 reverse transfer capacitance crss 13 pf f = 1mhz turn-on delay time t d(on) 20 ns i d = 2.5a rise time t r 15 ns v gs = 10v turn-off delay time t d(off) 65 ns r l = 100 w fall time t f 15 ns r g = 10 w total gate charge qg 15 nc v dd = 400v gate to source charge qgs 3 nc v gs = 10v gate to drain charge qgd 8 nc i d = 5a body?rain diode forward voltage v df 0.85 1.3 v i f = 5a, v gs = 0 body?rain diode reverse recovery time t rr 400 ns i f = 5a, v gs = 0 dif/ dt =100a/ m s body?rain diode reverse recovery charge q rr 1.5 m c note: 4. pulse test
H5N5001FM 4 main characteristics 40 30 20 10 0 50 100 150 200 30 10 3 1 0.3 0.1 13 10 30 100 300 1000 10 8 6 4 2 0 10 20 30 40 50 10 8 6 4 2 0 246810 0.03 0.01 100 ta = 25 ? v = 4v gs 5 v 5.5 v tc = 75? 25? ?5? 100 ? 1 ms pw = 10 ms (1shot) dc operation (tc = 25?) 10 ? 4.5 v 8 v 10 v 6 v channel dissipation pch (w) case temperature tc (?) power vs. temperature derating pulse test drain to source voltage v (v) ds drain current i (a) d typical output characteristics gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics v = 10 v pulse test ds drain to source voltage v (v) ds drain current i (a) d maximum safe operation area operation in this area is limited by r ds(on)
H5N5001FM 5 20 16 12 8 4 0 24 6 810 0.1 0.5 210 0.2 1 5 2 1 0.5 0.2 0.1 5 4 3 2 1 ?0 0 40 80 120 160 0 0.1 0.2 1 2 10 20 50 50 10 20 2 5 1 0.2 0.5 0.1 v = 10 v, 15 v gs 0.5 5 i = 5 a d 1 a v = 10 v gs i = 5 a d 2 a 1 a 2 a 50 20 5 25 ? tc = ?5 ? 75 ? gate to source voltage v (v) gs drain to source saturation voltage vs. gate to source voltage v (v) ds(on ) drain to source saturation voltage pulse test case temperature t c (?) r ( ) ds(on) static drain to source on state resistance w static drain to source on state resistance vs. temperature pulse test drain current i (a) d forward transfer admittance |y | (s) fs forward transfer admittance vs. drain current v = 10 v pulse test ds drain current i (a) d drain to source on state resistance r ( ) w ds(on) static drain to source on state resistance vs. drain current pulse test
H5N5001FM 6 0.1 0.3 1 3 10 30 100 1000 200 500 100 20 50 10 di / dt = 100 a / ? v = 0, ta = 25 ? gs 0 50 100 150 200 250 2000 5000 1000 100 200 500 1000 800 600 400 200 0 20 16 12 8 4 10 20 30 40 50 0 1000 200 500 100 20 10 50 0.1 0.3 1 3 10 30 100 20 50 10 5 v = 0 f = 1 mhz gs ciss coss crss v = 400 v 250 v 100 v dd i = 5 a d v ds v gs r t d(on) t d(off) t t f v = 10 v, v = 250 v pw = 10 ?, duty < 1 % r =10 ? gs dd g v = 100 v 250 v 400 v dd reverse drain current i (a) dr reverse recovery time trr (ns) body?rain diode reverse recovery time capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v (v) ds gate to source voltage v (v) gs dynamic input characteristics drain current i (a) d switching time t (ns) switching characteristics
H5N5001FM 7 0 0.4 0.8 1.2 1.6 2.0 10 8 6 4 2 v = 0 v gs 5, 10 v 5 4 3 2 1 -50 0 50 100 150 200 0 i = 10ma d 1ma 0.1ma v = 10 v ds vin monitor d.u.t. vin 10 v r l v = 250 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 10 w 90% 10% t f source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs. source to drain voltage pulse test case temperature tc (?) gate to source cutoff voltage v (v) gs(off) gate to source cutoff voltage vs. case temperature waveform switching time test circuit
H5N5001FM 8 10 100 1 m 10 m 100 m 1 10 1 0.3 0.1 0.03 0.01 3 0.001 0.003 1shot pulse d = 1 0.5 0.2 0.1 0.05 0.02 0.01 tc = 25? dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c ch ?c = 4.17 ?/w, tc = 25 ? q g q q pulse width pw (s) normalized transient thermal impedance s (t) g normalized transient thermal impedance vs. pulse width
H5N5001FM 9 package dimensions 10.0 0.3 7.0 0.3 3.2 0.2 12.0 0.3 0.6 2.8 0.2 2.5 0.2 17.0 0.3 14.0 1.0 0.5 0.1 2.5 4.45 0.3 5.0 0.3 2.0 0.3 0.7 0.1 2.54 0.5 2.54 0.5 1.2 0.2 1.4 0.2 f hitachi code jedec eiaj mass (reference value) to-220fm conforms 1.8 g as of january, 2001 unit: mm
H5N5001FM 10 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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